NTMFS6H836N دیتاشیت

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مشاهده دیتاشیت NTMFS6H836N	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NTMFS6H836NT1G
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 3.7W;89W
Total Gate Charge (Qg@Vgs): 25nC@10V
Drain Source Voltage (Vdss): 80V
Input Capacitance (Ciss@Vds): 1640pF@40V
Continuous Drain Current (Id): 15A;74A
Gate Threshold Voltage (Vgs(th)@Id): 4V@95uA
Reverse Transfer Capacitance (Crss@Vds): -
Drain Source On Resistance (RDS(on)@Vgs,Id): 6.7mΩ@15A,10V
Package: SO-8FL
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4V @ 95µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 40V
FET Feature: -
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
Base Part Number: NTMFS6
detail: N-Channel 80V 15A (Ta), 74A (Tc) 3.7W (Ta), 89W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)